A Zero External Magnetic Field Quantum Standard of Resistance at the 10⁻⁹ Level

Physics, Quantum Physics, Condensed Matter Physics, Engineering, Electrical Engineering,
Quantum Anomalous Hall Effect   Resistance Quantization   Magnetic Topological Insulator   Metrology   Quantum Standard  

Academic Background and Problem Statement In metrology, the quantum Hall effect (QHE) and the Josephson effect respectively provide quantum standards for electrical resistance (ohm) and voltage (volt). However, conventional quantum Hall resistance standards (QHRs) rely on strong external magnetic fields (typically requiring superconducting magnets ...

An On-Chip Full-Stokes Polarimeter Based on Optoelectronic Polarization Eigenvectors

Physics, Optics, Chemistry, Nanoscience, Engineering, Electrical Engineering, Information Science, Electronic Information,
polarimeter   optoelectronic eigenvector   Stokes parameters   on-chip integration   plasmonic metasurface   machine learning   polarization detection  

Research on On-Chip Full-Stokes Polarimeters Based on Optoelectronic Polarization Eigenvectors Academic Background The polarization state of light plays a significant role in optical communication, biomedical diagnostics, remote sensing, cosmology, and other fields. The Stokes vector, consisting of four parameters, is used to fully describe the pol...

High-Performance p-Type Field-Effect Transistors Using Substitutional Doping and Thickness Control of Two-Dimensional Materials

Physics, Condensed Matter Physics, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
two-dimensional materials   p-type field-effect transistors   substitutional doping   thickness control   contact resistance   quantum confinement effects   transition metal dichalcogenides  

High-Performance P-Type Field-Effect Transistors: Substitutional Doping and Thickness Control in Two-Dimensional Materials Academic Background As semiconductor technology progresses, silicon-based field-effect transistors (FETs) are approaching fundamental physical limits in performance enhancement. To overcome these challenges, researchers have be...

A Seamless Graphene Spin Valve Based on Proximity to Van der Waals Magnet Cr2Ge2Te6

Physics, Quantum Physics, Condensed Matter Physics, Chemistry, Nanoscience, Materials Science,
graphene   spin valve   van der Waals magnet   spin-orbit coupling   magnetic exchange coupling   spin Hall effect   anomalous Hall effect  

Construction of a Seamless Graphene Spin Valve: Proximity Effects from van der Waals Magnet Cr₂Ge₂Te₆ Research Background and Significance Graphene, as a two-dimensional material, has significant potential applications in spintronics due to its excellent electron transport properties and long spin diffusion length. However, graphene’s intrinsic spi...

Memristors with Analogue Switching and High On/Off Ratios Using a Van der Waals Metallic Cathode

Physics, Chemistry, Nanoscience, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices, Artificial Intelligence,
memristor   van der Waals metal   analogue switching   high on/off ratio   neuromorphic computing   silver ion intercalation   low power consumption  

Research on Analog Memristors with Large On/Off Ratios Using 2D Van der Waals Metallic Cathodes Academic Background With the rapid development of artificial intelligence (AI) applications, traditional Von Neumann architectures are facing performance bottlenecks in data-intensive computing tasks. Neuromorphic computing is an emerging paradigm capabl...