Academic Background With the advent of the information age, integrated circuits (ICs) have become the driving force behind technological advancements. However, traditional integrated photonics platforms, such as silicon and silicon nitride, face numerous limitations in material properties. For instance, silicon’s indirect bandgap restricts its use ...

Background Introduction Two-dimensional (2D) materials exhibit significant potential in fields such as nanoelectronics and optoelectronics due to their unique physical and chemical properties. However, structural perturbations at the nanoscale have a profound impact on their performance. Traditional characterization methods like Raman spectroscopy,...

Academic Background Cubic boron nitride (C-BN) is an ultra-wide bandgap semiconductor material with high thermal conductivity, low dielectric constant, and high breakdown electric field, making it highly promising for applications in high-temperature, high-power electronic devices. However, the synthesis of C-BN still faces numerous challenges, par...

As global attention to energy efficiency and environmental sustainability continues to grow, light-emitting diode (LED) technology has become a mainstream choice in the lighting and display sectors. However, despite significant advancements in the energy efficiency and performance of traditional LEDs, their reliance on rare materials during manufac...

Carbon nitride (CN), as a two-dimensional n-type semiconductor material, exhibits great potential in light-driven energy conversion and environmental applications due to its excellent photocatalytic activity and stability. However, despite its outstanding performance in photocatalysis, the application of CN in optoelectronic devices, especially sil...