A Zero External Magnetic Field Quantum Standard of Resistance at the 10⁻⁹ Level

Physics, Quantum Physics, Condensed Matter Physics, Engineering, Electrical Engineering,
Quantum Anomalous Hall Effect   Resistance Quantization   Magnetic Topological Insulator   Metrology   Quantum Standard  

Academic Background and Problem Statement In metrology, the quantum Hall effect (QHE) and the Josephson effect respectively provide quantum standards for electrical resistance (ohm) and voltage (volt). However, conventional quantum Hall resistance standards (QHRs) rely on strong external magnetic fields (typically requiring superconducting magnets ...

High-Performance p-Type Field-Effect Transistors Using Substitutional Doping and Thickness Control of Two-Dimensional Materials

Physics, Condensed Matter Physics, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
two-dimensional materials   p-type field-effect transistors   substitutional doping   thickness control   contact resistance   quantum confinement effects   transition metal dichalcogenides  

High-Performance P-Type Field-Effect Transistors: Substitutional Doping and Thickness Control in Two-Dimensional Materials Academic Background As semiconductor technology progresses, silicon-based field-effect transistors (FETs) are approaching fundamental physical limits in performance enhancement. To overcome these challenges, researchers have be...

A Seamless Graphene Spin Valve Based on Proximity to Van der Waals Magnet Cr2Ge2Te6

Physics, Quantum Physics, Condensed Matter Physics, Chemistry, Nanoscience, Materials Science,
graphene   spin valve   van der Waals magnet   spin-orbit coupling   magnetic exchange coupling   spin Hall effect   anomalous Hall effect  

Construction of a Seamless Graphene Spin Valve: Proximity Effects from van der Waals Magnet Cr₂Ge₂Te₆ Research Background and Significance Graphene, as a two-dimensional material, has significant potential applications in spintronics due to its excellent electron transport properties and long spin diffusion length. However, graphene’s intrinsic spi...

Fractional Quantum Hall Phases in High-Mobility n-Type Molybdenum Disulfide Transistors

Physics, Quantum Physics, Condensed Matter Physics, Information Science, Semiconductors and Information Devices,
Fractional Quantum Hall Effect   Molybdenum Disulfide   High Mobility   Cryogenic Electronics   Quantum Computing  

Research Report on the Paper on Fractional Quantum Hall Phases in High Mobility n-Type Molybdenum Disulfide Transistors Background and Motivation At low temperatures, field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) theoretically provide high carrier mobility, strong spin-orbit coupling, and intrinsic ...

Nonlinear Coupling of Closely Spaced Modes in Atomically Thin MoS2 Nanoelectromechanical Resonators

Physics, Condensed Matter Physics, Chemistry, Nanoscience, Engineering, Mechanical Engineering, Electrical Engineering,
Nanoelectromechanical Systems   Nonlinear Coupling   Molybdenum Disulfide   Resonators   Thermomechanical Noise  

Study of Nonlinear Coupling in Atomically Thin MoS₂ Nanoelectromechanical Resonators Academic Background With the rapid development of nanotechnology, Nanoelectromechanical Systems (NEMS) have shown great potential in fields such as sensors, signal processing, and quantum computing. Particularly, two-dimensional (2D) materials like molybdenum disul...