Structural and Chemical Analysis of C-BN/Diamond Heterostructures

Academic Background Cubic boron nitride (C-BN) is an ultra-wide bandgap semiconductor material with high thermal conductivity, low dielectric constant, and high breakdown electric field, making it highly promising for applications in high-temperature, high-power electronic devices. However, the synthesis of C-BN still faces numerous challenges, par...

Covalent Heterostructures of Ultrathin Amorphous Carbon Nitride and Si for High-Performance Vertical Photodiodes

Carbon nitride (CN), as a two-dimensional n-type semiconductor material, exhibits great potential in light-driven energy conversion and environmental applications due to its excellent photocatalytic activity and stability. However, despite its outstanding performance in photocatalysis, the application of CN in optoelectronic devices, especially sil...

Giant Electron-Mediated Phononic Nonlinearity in Semiconductor–Piezoelectric Heterostructures

Giant Electron-Mediated Phononic Nonlinearity in Semiconductor–Piezoelectric Heterostructures

Large Electron-Mediated Phonon Nonlinearity in Semiconductor-Piezoelectric Heterostructures In modern science and technology, the efficiency and determinacy of information processing are crucial determinants of its application potential. Nonlinear photonic interactions at optical frequencies have already demonstrated significant breakthroughs in bo...