Spatio-Temporal Graph-Based Generation and Detection of Adversarial False Data Injection Evasion Attacks in Smart Grids

Engineering, Electrical Engineering, Information Science, Computer Science, Artificial Intelligence,
smart grids   false data injection attacks   adversarial attacks   spatio-temporal graphs   graph neural networks   machine learning   cybersecurity  

Title: Generating and Detecting Spatio-Temporal Graph-Based Adversarial False Data Injection Evasion Attacks in Smart Grids Background With the continuous development of modern smart grids, the grid, as a typical Cyber-Physical System (CPS), faces numerous security threats due to the extensive exchange of data between its components. Among these, F...

Event-Triggered Fuzzy Adaptive Stabilization of Parabolic PDE–ODE Systems

Mathematics, Engineering, Electrical Engineering, Information Science, Automation, Artificial Intelligence,
Event-Triggered Control   Fuzzy Logic Systems   Parabolic PDE-ODE Systems   Stabilization Control   Adaptive Backstepping  

Scientific Report: On “Event-Triggered Fuzzy Adaptive Stabilization of Parabolic PDE–ODE Systems” Research Background and Significance In modern engineering systems, such as flexible manipulators, heat transfer devices, and reactor controllers, many complex systems must be modeled using partial differential equations (PDEs). Due to their unique rea...

Integration of High-κ Native Oxides of Gallium for Two-Dimensional Transistors

Chemistry, Nanoscience, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
2D semiconductors   gallium oxide   high-κ dielectric   transistors   surface-tension-driven method   ultrathin layer   interface quality  

Report on the Integration of High-κ Gallium Oxide in 2D Transistors Academic Background With the continuous advancement in semiconductor technology, 2D materials (such as molybdenum disulfide, MoS₂) are considered promising candidates for next-generation transistor channel materials due to their unique electrical properties and atomic-scale thickne...

Rapid Cryogenic Characterization of 1,024 Integrated Silicon Quantum Dot Devices

Physics, Quantum Physics, Engineering, Electrical Engineering, Information Science, Semiconductors and Information Devices,
quantum dots   silicon quantum dots   cryogenic characterization   quantum computing   semiconductor manufacturing   radio-frequency reflectometry   automated machine learning  

Rapid Cryogenic Characterization of 1,024 Integrated Silicon Quantum Dot Devices: A Review Background Quantum computing, as a disruptive technology in computing, holds the promise of far surpassing traditional high-performance computers in areas such as materials science, drug discovery, and big data search. Silicon-based quantum dots (Quantum Dot,...

Three-Dimensional Transistors with Two-Dimensional Semiconductors for Future CMOS Scaling

Chemistry, Nanoscience, Engineering, Electrical Engineering, Materials Science, Information Science, Semiconductors and Information Devices,
2D semiconductors   3D transistors   CMOS technology   quantum transport simulations   energy efficiency   nanoscale scaling   transition metal dichalcogenides  

Academic Paper Report: Three-Dimensional Transistors with Two-Dimensional Semiconductors for Future CMOS Scaling Introduction In recent years, as silicon-based complementary metal-oxide-semiconductor (CMOS) technology approaches its physical limits, the continued miniaturization and performance optimization of next-generation microelectronics face ...